? 2000 ixys all rights reserved 1 - 1 i dav = 122 a v rrm = 800-1800 v symbol test conditions maximum ratings i dav t c = 100 c, module 122 a i dav t a = 35 c (r thca = 0.2 k/w), module 115 a i fsm t vj = 45 c; t = 10 ms (50 hz), sine 1800 a v r = 0 t = 8.3 ms (60 hz), sine 1950 a t vj = t vjm t = 10 ms (50 hz), sine 1600 a v r = 0 t = 8.3 ms (60 hz), sine 1800 a i 2 t t vj = 45 c t = 10 ms (50 hz), sine 16 200 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 16 200 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 12 800 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 13 400 a 2 s t vj -40...+150 c t vjm 150 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque (m6) 5 15 % nm terminal connection torque (m6) 5 15 % nm weight typ. 270 g dimensions in mm (1 mm = 0.0394") features package with screw terminals isolation voltage 3000 v~ planar passivated chips blocking voltage up to 1800 v low forward voltage drop ul applied applications supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors advantages easy to mount with two screws space and weight savings improved temperature and power cycling v rsm v rrm type vv 800 800 vbo 130-08no7 1200 1200 vbo 130-12no7 1400 1400 vbo 130-14no7 1600 1600 vbo 130-16no7 1800 1800 vbo 130-18no7 data according to iec 60747 refer to a single diode unless otherwise stated ixys reserves the right to change limits, test conditions and dimensions. symbol test conditions characteristic values i r v r = v rrm ;t vj = 25 c 0.3 ma v r = v rrm ;t vj = t vjm 5ma v f i f = 300 a; t vj = 25 c 1.65 v v t0 for power-loss calculations only 0.8 v r t t vj = t vjm 3m r thjc per diode, 180 0.65 k/w per module 0.108 k/w r thjk per diode; 180 0.83 k/w per module 0.138 k/w d s creeping distance on surface 10 mm d a creepage distance in air 9.4 mm a max. allowable acceleration 50 m/s 2 m6x10 7 3 30 27 6.5 6.5 c~ e~ a+ b- 54 15 12 25 66 26 26 72 80 94 vbo 130 single phase rectifier bridge ~ ~ + - + ? ~ ~ 008
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